Pulsed laser deposition(PLD) coating equipment

The device using pulsed laser deposition (PLD) thin film deposition techniques, by means of pulsed laser rapid evaporation of the target, the generation and target composition film of the same. Through the continuous melting of mixed target, the production of different materials of the multilayer film, through the control of the number of pulses, you can precisely adjust the film thickness to a single atomic layer.

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PLD激光脉冲沉积设备

The device using pulsed laser deposition (PLD) thin film deposition techniques, by means of pulsed laser rapid evaporation of the target, the generation and target composition film of the same. Through the continuous melting of mixed target, the production of multilayer film with different materials, through the control of the number of pulses, you can precisely adjust the film thickness to a single atomic layer. PLD method can gain possession of the steady state of the composition and structure of synthetic material criterions of thermodynamic theory, the manufacture of ceramic oxide and nitride films, metal multilayers and a variety of super lattice(superlattices).

Thin film growth principle:

PLD is a laser pulse through the synthetic quartz window into the vacuum chamber radiation, then into the target membrane, the target, after irradiatingabsorbed high density energy and formation of plume like plasma state, are then formed films on its opposite substrate.

Features:

  • A laser beam can be used for a plurality of vacuum systems, and the cost is saved;
  • About 10 to 15 minutes, can grow high quality samples, to achieve high efficiency coating;
  • As a "digital" technology, process control (A/pulse) can be carried out on the nanometer scale;
  • The deposited film retains the stoichiometric composition of the target, and the film is composed of the same chemical composition as the target;
  • By controlling the coating pressure and temperature, a series of nano structure and nano particles with unique function can be synthesized;
  • Energy source (pulsed laser) is located outside the vacuum chamber, in the synthesis of the material, the dynamic range of the working pressure is very wide, reaching Torr 10-10 ~ 100 Torr.

Pulsed laser deposition coating system

 

Mode HCPLD-80 HCPLD-120 HCPLD-180 HCPLD-240
Vacuum chamber dimension 8 inches 12 inches 18 inches 24 inches
Vacuum system Molecular pump + Dry mechanical pump
Pressure(Torr) <10-8 <10-8 <10-8 <10-8
Max temperature 950℃ 950℃ 850℃ 850℃
Ultimate pressure 5.0×10-5 Pa 5.0×10-5 Pa 5.0×10-5 Pa 5.0×10-5 Pa
Rotating frame  Male rotation  Male rotation   Male rotation    Male rotation
Rotation speed 0~60 r/min 0~60 r/min 0~60 r/min 0~60 r/min
Applicable materials: high temperature superconducting, memory materials, oxide semiconductor materials, iron magnetic materials, three five materials
Mainly used for the preparation of oxide film, superconducting thin film, semiconductor film, ferroelectric film, super hard film, etc., can be plated single film or multi-layer film.