Physical vapor deposition (PVD) covers special processes in the field of thin film technology. It refers to the process of depositing thin films on the surface of substrates by physical means on the basis of vacuum.

As the most economical deposition method, sputtering process is regarded as the standard coating technology in many processes, and is widely used in many industrial fields. One of the main reasons why sputtering technology is so popular is that a variety of materials can be deposited on a wide variety of substrates.

Sputtering process is widely used in many fields, such as semiconductor industry surface treatment, optical industry polarization filter production or large area surface coating of building glass industry.

In all PVD processes, the materials used to grow thin films are initially in solid form and are often placed somewhere in the process chamber, such as sputtering targets. In order to vaporize the material and subsequently polymerize and deposit on the surface of the substrate in the form of thin films, the process will be applied in a variety of ways (e.g., using short-time, high-energy radio frequency pulses, adding arc, ion or electron bombardment, etc.).

In the thermal evaporation deposition process, the material used to grow the film is heated by an electric heater until it is converted into a gaseous state. The PVD spectrum also includes MBE and ion beam sputtering. The film produced by the above method has high purity, excellent uniformity and strong adhesion to the substrate. PVD coating is more environmentally friendly than the traditional electrochemical process, which can be used as an alternative to the traditional electrochemical process and widely used in many fields.

Sputtering technology is one of PVD (physical vapor deposition) film technology. The material to be coated (sputtering target) is bombarded by plasma ions, and the particles escape into the gas phase state, which are deposited on the surface of the substrate and bonded tightly to form an ultra-thin film layer. The process can be applied to a variety of substrates (metals, alloys, oxides and nitrides) uniformly, and can be applied to a wide range of fields from semiconductor silicon wafers to building glass. As a common coating method in the field of thin film technology, sputtering deposition technology has been widely used in decades. HCVAC is the world's top manufacturer of sputtering technology, especially in magnetron applications. Our company provides reactive and non reactive magnetron sputtering special expertise, covering DC (DC), pulsed DC (pulsed DC, monopole and bipolar), as well as intermediate frequency (MF) and high frequency (HF) AC technology. According to the different materials, the characteristics of the corresponding films and the deposition rate, different sputtering techniques will be used in the vacuum equipment. HCVAC also produces sputtering target materials by itself to ensure customers get the best quality experience of finished films. If the coating materials required by customers cannot be directly produced or generated by single target reaction, we can also provide co sputtering technology, that is, using two or more different targets in the same deposition process. For R & D multifunctional equipment, the confocal array magnetron co sputtering process with only one target is a typical and attractive solution, because it can adjust the film composition as flexibly as possible.

The thermal evaporation deposition process supports the preparation of metal films such as copper, silver or gold, or films of other materials such as silicon dioxide and indium tin oxide. The process is also suitable for organic semiconductor substrate coating. Thermal evaporation deposition process is also used in the production of CIGS solar cells (co evaporation of Cu, in, GA, Se) and organic solar cells (monomer evaporation).

Thermal evaporation deposition, similar to sputtering deposition, is also a PVD (physical vapor deposition) film process. In the process, the plating material will be heated until evaporation (liquid) or sublimation (solid), and the resulting vapor particles will be deposited on the surface of the substrate and grow into a finished film.

Thermal evaporation, like most other PVD processes, is a high vacuum process, and reactive thermal evaporation process can also be realized: for example, the deposition performance of indium tin oxide can be improved by introducing ionized oxygen into the true cavity.

Different from other PVD film processes, thermal evaporation can achieve high deposition rate according to different evaporation materials and film properties. In order to ensure the optimization of evaporation process parameters, HCVAC can provide equipment equipped with different kinds of evaporation sources, such as crucible or evaporation boat, linear plating or spray plating and special evaporation source.

At low temperature of 20 ohm, the transmittance of the film is & gt; 95%, and the square resistance of the film is 20 ± 2 Ω / □.

It can be used in grid coating equipment combined with special post-processing technology to produce ITO films with resistivity close to high temperature under the premise of substrate temperature lower than 80 ℃, without damaging substrate materials. This technology can be used in a variety of substrate materials that cannot be produced at high temperature.

In plasma enhanced chemical vapor deposition (PECVD), the chemical reaction process is assisted by plasma. With the aid of plasma, the process temperature from 200 to 500 ° C is enough to realize the preparation of finished film, so the temperature load of substrate is reduced.

The plasma can be excited near the substrate (short range plasma method). However, for sensitive substrates such as semiconductor silicon wafers, radiation and ion bombardment may damage the substrate.

On the other hand, in the remote plasma method, there is a space partition between the plasma and the substrate. The partition not only protects the substrate, but also allows the activation of specific components of the mixed process gas. However, in order to ensure that the chemical reaction starts when the activated particles really reach the surface of the substrate, the process needs to be carefully designed.

"Low temperature CVD" process is widely used and Huicheng vacuum has many years of experience in this field. PECVD process is an attractive alternative for substrates that cannot withstand high temperatures. For example, the process supports the preparation of functional films on plastic films.

Because the diffusion process at high temperature may damage the doping profile, PECVD coating process is widely used in the semiconductor field. In addition, PECVD process can also be used to prepare polycrystalline silicon, silicon nitride or silicon oxide composite materials for microelectronic devices.

The PECVD equipment of HCVAC can be customized according to the customer's requirements and can be adapted according to the expected process indexes. We also often configure PECVD process module in sputtering equipment to expand technical capacity. HCVAC's competitive equipment price and best equipment quality will surely make you excited.

Chemical vapor deposition (CVD) is a mature technology commonly used in the field of thin film technology. In this process, the solid material is deposited on the heated substrate surface by chemical reaction in the gaseous state, forming a thin film. HCVAC provides a special solution for CVD process of depositing carbon or silicon nitride (SIC) on substrates such as wires and optical fibers.

CVD coating is a high temperature process, which requires a temperature of 500 ° C or above, and high energy input. The vacuum environment in the process chamber can reduce the melting point and avoid unnecessary chemical reactions while ensuring the precursor material to be converted into gas phase.

Different from PVD process, CVD allows the film with complex shape and three-dimensional surface to keep shape. The process can also be used to prepare very fine structures on the surface of silicon wafers.

The prerequisite for CVD coating is to find a suitable precursor, which can provide all the components of the film required in the process chamber. For example, ammonia and dichlorosilane are used as precursors for the silicon nitride deposition process, stannous chloride or organotin compounds, and oxygen or water vapor are used as precursors for depositing SnO2 thermal insulation coatings on flat glass. SnO2 can also protect the glass in the filter system from potential damage due to collision or mechanical stress.

The state of the substrate surface will affect the growth of the film. Only when the process design is reasonable can the metal material grow as expected in the special area of the substrate surface; for example, only in the conductive area but not in the insulation area. In the field of microelectronics, this selective coating makes CVD and PECVD process very popular.

The CVD equipment of HCVAC can be customized according to different customer application scope and corresponding process indexes. We often add CVD / PECVD process module to effectively expand the technical performance of sputtering coating. HCVAC provides customers with excellent product quality, high quality user experience and solid component performance with competitive product price.