Ion beam assisted deposition

Cleaning at high rate

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High performance RF ion source with ion assisted evaporation RF ion source

HC-Rf I ion assisted deposition (IAD) and cleaning are the most suitable ion beam assisted deposition (IAD) sources with high performance. Mounted on the vacuum coating machine, it is most suitable for mass production of various optical filters.

HC-Rf Ⅱ plus is an extension of OIS two. In the aspect of large current and large area performance of ion assisted evaporation, RF ion source is evolved to optimize maintenance performance and neutralizer, so as to improve cooling efficiency to achieve stable production. It is suitable for ion beam assisted deposition (IAD) and cleaning at high rate. It can be used in mass production of various optical filters.

It can be used in inert and reactive environment, with a working current of 90mA and a working voltage of 3000V. Although the grid aperture is only 10cm, the design fully considers the high current density and uniformity. It is installed in the film-forming machine to fully illuminate the workpiece frame, which is most suitable for the medium-scale mass production, trial production, research and development of various optical filters.

Applications include semiconductor, substrate pre-cleaning, ion assisted (ITO and Ag assisted deposition), etching / nano texture / coating removal, pacvd-dlc deposition and ion beam deposition.

Product Advantage.

HC-RF RF ion source with high performance of ion assisted evaporation includes the following key capabilities:
  • Patent

    Huicheng independent research and development ion source

  • High dissociation rate

    High ion current density and uniform distribution

  • Widely distributed

    The irradiation area can reach over Ф 1150mm

  • Stable

    High action stability, long time operation

  • Environment protection

    Long life, less pollution

  • Simple

    Easy to operate and maintain

Mode HC-RFⅠ
Dimensions φ300mm × 150mm (H)
Grid Ф 17cm three molybdenum grids
Beam Voltage 100V~1500V
Max Beam Current 1000mA
Acc Voltage 100V~1000V
Max RF Power 600W
Gas Flow Rate 20sccm~30sccm(argon)
40sccm~60sccm(oxygen)
Pressure 5 × 10-2 Pa
Water-cooling RF coil and body

Application cases.

Mode HC-RFⅡ
Size φ300mm × 150mm (H)
Grid Ф 17cm three molybdenum grids
Beam Voltage 100V~1500V
Max Beam Current 1200mA
Acc Voltage 100V~1000V
Max RF Power 750W/1000W
Gas Flow Rate 20sccm~30sccm(argon)
40sccm~60sccm(oxygen)
Pressure 5 × 10-2 Pa
Water-cooling RF coil and body

Application cases.

Mode HC-RFⅢ
Size φ 390mm × 215mm(H)
Grid Ф 23cm three molybdenum grids
Beam Voltage 100V~1500V
Max Beam Current 1800mA/2400mA
Acc Voltage 100V~1000V
Max RF Power 2000W
Gas Flow Rate 20sccm~40sccm(argon)
40sccm~80sccm(oxygen)
Pressure 5 × 10-2 Pa
Water-cooling RF coil and body

Application cases.

Mode HC-RFⅣ
Size φ 224mm ×143mm (H)
Grid Ф 10cm three molybdenum grids
Beam Voltage 100V~1500V
Max Beam Current 500mA
Acc Voltage 100V~1000V
Max RF Power 600W
Gas Flow Rate 25sccm~35sccm(argon)
10sccm~20sccm(oxygen)
Pressure 5.0 ×10-2 Pa
Water-cooling RF coil and body

Application cases.

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